PART |
Description |
Maker |
KM44C4005C |
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out
|
Samsung semiconductor
|
KM44C4103C KM44C4003C KM44C4003CK-6 KM44C4003CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
AS4C4M4E1Q AS4CM4E1Q-50 AS4CM4E1Q-60 AS4CM4EOQ AS4 |
Thick Film Chip Resistor - RMC 1 3.9 5% R 4米4的CMOS QuadCAS的DRAM(江户)家庭 4M X 4 CMOS Quad CAS DRAM (EDO) family 4M x 4 CMOS QuadCAS DRAM (EDO) family
|
Analog Devices, Inc. ALSC[Alliance Semiconductor Corporation]
|
KMM5364003BSW KMM5364003BSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
MT4C4004J |
1 MEG x 4 DRAM 5V, QUAD CAS PARITY, FAST PAGE MODE
|
MICRON[Micron Technology]
|
K4F160412D K4F160411D-BL50 |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
|
Samsung Semiconductor Co., Ltd.
|
K4S640432E-TC K4S640432E K4S640432E-L1H K4S640432E |
4M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KM44S32030B KM44S32030BT-G_F10 KM44S32030BT-G_F8 |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung semiconductor
|
CD4043BMS CD4043BMSH CD4044BMS CD4044BMSH FN3311 C |
Single 100Mbps Digital Isolator with Enable 8-SOIC -40 to 125 CMOS Quad Clocked “DLatch R/S Latches, Tri-State, Quad, Rad-Hard, CMOS, Logic CMOS Quad Clocked “D” Latch From old datasheet system CMOS Quad 3 State R/S Latches CMOS Quad Clocked D Latch CMOS Quad Clocked “D Latch
|
INTERSIL[Intersil Corporation]
|
K4S280432M-TC_L80 K4S280432M K4S280432M-TC_L10 K4S |
MC 7P MR 16/1 PVC GOLD RoHS Compliant: Yes 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4F160411C-B K4F170411C K4F170411C-B K4F170411C-F |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns
|
Samsung Electronic Samsung semiconductor
|